Optical Absorption in InGaN/GaN Single and Multiple Quantum Wells for Optoelectronic Applications

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dc.contributor.advisorAnouar JORIO
dc.contributor.advisorHaddou EL-GHAZI
dc.contributor.authorEN-NADIR Radouane
dc.date.accessioned2026-09-07T08:59:29Z
dc.date.issued2022
dc.description.cedocSciences et Techniques et Sciences Médicales
dc.description.collaboratorIzeddine ZORKANI
dc.description.collaboratorAhmed SALI
dc.description.collaboratorKhalid RAHMANI
dc.description.collaboratorKhalid BOUZIANE
dc.description.collaboratorAbdellah REZZOUK
dc.description.collaboratorHamdi SÜKÜR KILIÇ
dc.description.collaboratorHaddou EL-GHAZI
dc.description.collaboratorMimouna BAITOUL
dc.description.laboratoireLaboratory of Solid-state Physics
dc.identifier.urihttps://toubkal.imist.ma/handle/123456789/742
dc.identifier.urihttps://doi.org/10.83129/toubkal-26817
dc.language.isoen
dc.publisherFaculté des Sciences - Dhar El Mahraz - Fèsfr_FR
dc.subjectOptical absorptionfr_FR
dc.subjectInGaN/GaNfr_FR
dc.subjectQuantum wellsfr_FR
dc.subjectOptoelectronicsfr_FR
dc.subjectSemiconductor materialsfr_FR
dc.subjectNanomaterialsfr_FR
dc.titleOptical Absorption in InGaN/GaN Single and Multiple Quantum Wells for Optoelectronic Applicationsfr_FR

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Faculté des Sciences - Dhar El Mahraz - Fès